NTGD4161P
Power MOSFET
?30 V, ?2.3 A, Dual P?Channel, TSOP?6
Features
? Fast Switching Speed
? Low Gate Charge
? Low R DS(on)
? Independently Connected Devices to Provide Design Flexibility
? This is a Pb?Free Device
V (BR)DSS
http://onsemi.com
R DS(on) Max
Applications
? Load Switch
? Battery Protection
? Portable Devices Like PDAs, Cellular Phones and Hard Drives
?30 V
P?Channel
160 m W @ ?10 V
280 m W @ ?4.5 V
P?Channel
(MOSFET1)
(MOSFET2)
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
D1
D2
Parameter
Drain?to?Source Voltage
Gate?to?Source Voltage
Symbol
V DSS
V GS
Value
?30
± 20
Unit
V
V
Continuous Drain
Current (Note 1)
Power Dissipation
Steady
State
t ≤ 5s
Steady
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
?2.1
?1.5
?2.3
1.1
A
W
G1
S1
G2
S2
(Note 1)
State
t ≤ 5s
1.3
MARKING DIAGRAM
Continuous Drain
Current (Note 2)
Power Dissipation (Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
?1.5
?1.1
0.6
A
W
1
TSOP?6
D1 S1 D2
S8 M G
G
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I DM
T J ,
?10
?55 to
A
° C
CASE 318G
STYLE 13
G1 S2 G2
T STG
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I S
T L
?0.8
260
A
° C
S8
M
G
= Specific Device Code
= Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
*Date Code orientation may vary depending upon
Parameter
Junction?to?Ambient ? Steady State (Note 1)
Junction?to?Ambient ? Steady State (Note 2)
Symbol
R q JA
Max
115
225
Unit
° C/W
manufacturing location.
ORDERING INFORMATION
Junction?to?Ambient ? t ≤ 5 s (Note 1)
95
Device
Package
Shipping ?
Junction?to?Case ? Steady State (Note 1)
R q JC
40
NTGD4161PT1G
TSOP?6
3000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in. pad size
(Cu. area = 1.2 in 2 [1 oz] including traces)
2. When surface mounted to an FR4 board using minimum recommended
pad size (Cu. area = 0.047 in 2 )
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
September, 2006 ? Rev. 1
1
Publication Order Number:
NTGD4161P/D
相关PDF资料
NTGD4167CT1G MOSFET N/P-CH 30V DUAL 6-TSOP
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NTGS1135PT1G MOSFET P-CH 8V 4.6A 6-TSOP
NTGS3130NT1G MOSFET N-CH SGL 20V 5.6A 6-TSOP
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